| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Petersen, Dirch Hjorth
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (33/33 displayed)
- 2024Electron-vacancy scattering in SrNbO3 and SrTiO3
- 2024Deconvolution of heat sources for application in thermoelectric micro four-point probe measurementscitations
- 2023Octahedral distortions in SrNbO3citations
- 2022Review of Micro- and Nanoprobe Metrology for Direct Electrical Measurements on Product Waferscitations
- 2022Determination of thermoelectric properties from micro four-point probe measurementscitations
- 2021Effective electrical resistivity in a square array of oriented square inclusionscitations
- 2019Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nmcitations
- 2019Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nmcitations
- 2017High temperature SU-8 pyrolysis for fabrication of carbon electrodescitations
- 2016Defect evolution and dopant activation in laser annealed Si and Gecitations
- 2016Defect evolution and dopant activation in laser annealed Si and Gecitations
- 2016Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Coppercitations
- 2016Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Coppercitations
- 2016Pyrolytic carbon microelectrodes for impedance based cell sensingcitations
- 2015Terahertz wafer-scale mobility mapping of graphene on insulating substrates without a gatecitations
- 2014Electrical characterization of sputtered ZnO:Al films with microprobe technique
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2014Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Currentcitations
- 2014Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios
- 2012In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substratescitations
- 2012Activation and thermal stability of ultra-shallow B+-implants in Ge
- 2012Activation and thermal stability of ultra-shallow B + -implants in Gecitations
- 2012Effect of B + Flux on the electrical activation of ultra-shallow B + implants in Ge
- 2012Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge
- 2011Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealingcitations
- 2011Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealingcitations
- 2010Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam millingcitations
- 2010Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam millingcitations
- 2010Study of submelt laser induced junction nonuniformities using Therma-Probecitations
- 2008Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctionscitations
- 2008Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctionscitations
- 2008Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxycitations
- 2002Simulated SAM A-scans on multilayer MEMS components
Places of action
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article
Customizable in situ TEM devices fabricated in freestanding membranes by focused ion beam milling
Abstract
Nano- and microelectromechanical structures for in situ operation in a transmission electron microscope (TEM) were fabricated with a turnaround time of 20 min and a resolution better than 100 nm. The structures are defined by focused ion beam (FIB) milling in 135 nm thin membranes of single crystalline silicon extending over the edge of a pre-fabricated silicon microchip. Four-terminal resistance measurements of FIB-defined nanowires showed at least two orders of magnitude increase in resistivity compared to bulk. We show that the initial high resistance is due to amorphization of silicon, and that current annealing recrystallizes the structure, causing the electrical properties to partly recover to the pristine bulk resistivity. In situ imaging of the annealing process revealed both continuous and abrupt changes in the crystal structure, accompanied by instant changes of the electrical conductivity. The membrane structures provide a simple way to design electron-transparent nanodevices with high local temperature gradients within the field of view of the TEM, allowing detailed studies of surface diffusion processes. We show two examples of heat-induced coarsening of gold on a narrow freestanding bridge, where local temperature gradients are controlled via the electrical current paths. The separation of device processing into a one-time batch-level fabrication of identical, generic membrane templates, and subsequent device-specific customization by FIB milling, provides unparalleled freedom in device layout combined with very short effective fabrication time. This approach significantly speeds up prototyping of nanodevices such as resonators, actuators, sensors and scanning probes with state-of-art resolution.