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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Graham, Samuel
in Cooperation with on an Cooperation-Score of 37%
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Publications (6/6 displayed)
- 2024MAX Phase Ti<sub>2</sub>AlN for HfO<sub>2</sub> Memristors with Ultra‐Low Reset Current Density and Large On/Off Ratiocitations
- 2021Geomechanical characterisation of organic-rich calcareous shale using AFM and nanoindentationcitations
- 2020Diamond Seed Size and the Impact on Chemical Vapor Deposition Diamond Thin Film Propertiescitations
- 2019The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTscitations
- 2018Transient Liquid Phase Bonding of AlN to AlSiC for Durable Power Electronic Packagescitations
- 2016Spectroscopy and control of near-surface defects in conductive thin film ZnOcitations
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article
Spectroscopy and control of near-surface defects in conductive thin film ZnO
Abstract
The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.