| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sarakinos, Kostas
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024Unravelling the effect of nitrogen on the morphological evolution of thin silver films on weakly-interacting substratescitations
- 2023In situ and real-time studies of ultrathin silver films grown by physical vapor deposition
- 2022Manipulation of thin metal film morphology on weakly interacting substrates via selective deployment of alloying speciescitations
- 2021On the effect of copper as wetting agent during growth of thin silver films on silicon dioxide substratescitations
- 2021Clustering and Morphology Evolution of Gold on Nanostructured Surfaces of Silicon Carbidecitations
- 2021Clustering and Morphology Evolution of Gold on Nanostructured Surfaces of Silicon Carbide : Implications for Catalysis and Sensingcitations
- 2020The effect of kinetics on intrinsic stress generation and evolution in sputter-deposited films at conditions of high atomic mobilitycitations
- 2020In situ and real-time nanoscale monitoring of ultra-thin metal film growth using optical and electrical diagnostic toolscitations
- 2020Manipulation of epitaxial graphene towards novel properties and applicationscitations
- 20203D-to-2D morphology manipulation of sputter-deposited nanoscale silver films on weakly interacting substrates via selective nitrogen deployment for multifunctional metal contactscitations
- 2019Atomic-scale diffusion rates during growth of thin metal films on weakly-interacting substratescitations
- 2019Semi-empirical force-field model for the Ti 1-x Al x N (0 ≤ x ≤ 1) systemcitations
- 2019Semi-Empirical Force-Field Model For The Ti1-XAlXN (0 ≤ x ≤ 1) Systemcitations
- 2017Synthesis of tunable plasmonic metal-ceramic nanocomposite thin films by temporally modulated sputtered fluxescitations
- 2016A kinetic model for stress generation in thin films grown from energetic vapor fluxescitations
- 2016Compressive intrinsic stress originates in the grain boundaries of dense refractory polycrystalline thin filmscitations
- 2016Theoretical and experimental study of metastable solid solutions and phase stability within the immiscible Ag-Mo binary systemcitations
- 2015Coalescence-controlled and coalescence-free growth regimes during deposition of pulsed metal vapor fluxes on insulating surfacescitations
- 2014Principles for designing sputtering-based strategies for high-rate synthesis of dense and hard hydrogenated amorphous carbon thin filmscitations
- 2014Double in-plane alignment in biaxially textured thin filmscitations
- 2014Atomistic view on thin film nucleation and growth by using highly ionized and pulsed vapour fluxescitations
- 2014Deposition of yttria-stabilized zirconia thin films by high power impulse magnetron sputtering and pulsed magnetron sputteringcitations
- 2013Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substratescitations
- 2013Atom insertion into grain boundaries and stress generation in physically vapor deposited filmscitations
- 2013Tilt of the columnar microstructure in off-normally deposited thin films using highly ionized vapor fluxescitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012Influence of ionization degree on film properties when using high power impulse magnetron sputteringcitations
- 2012An introduction to thin film processing using high-power impulse magnetron sputteringcitations
- 2012Growth of ti-C nanocomposite films by reactive high power impulse magnetron sputtering under industrial conditionscitations
- 2012Exploring the potential of high power impulse magnetron sputtering for growth of diamond-like carbon filmscitations
- 2010High power pulsed magnetron sputteringcitations
- 2010Ab initio study of effects of substitutional additives on the phase stability of γ -aluminacitations
- 2009On the phase formation of titanium oxide films grown by reactive high power pulsed magnetron sputteringcitations
- 2008Tailoring of structure formation and phase composition in reactively sputtered zirconium oxide films using nitrogen as an additional reactive gascitations
- 2007Process characteristics and film properties upon growth of TiOx films by high power pulsed magnetron sputteringcitations
- 2007The role of backscattered energetic atoms in film growth in reactive magnetron sputtering of chromium nitridecitations
- 2005Structural factors determining the nanomechanical performance of transition metal nitride films
Places of action
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article
Ab initio study of effects of substitutional additives on the phase stability of γ -alumina
Abstract
<p>Using ab initio calculations, we have evaluated two structural descriptions of γ -Al<sub>2</sub>O<sub>3</sub>, spinel and tetragonal hausmannite, and explored the relative stability of γ -Al<sub>2</sub>O<sub>3</sub> with respect to α-Al<sub>2</sub>O<sub>3</sub> with 2.5 at.% of Si, Cr, Ti, Sc, and Y additives to identify alloying element induced electronic structure changes that impede the γ to α transition. The total energy calculations indicate that Si stabilizes γ -Al<sub>2</sub>O<sub>3</sub>, while Cr stabilizes α-Al<sub>2</sub>O<sub>3</sub>. As Si is added, a bond length increase in α-Al<sub>2</sub>O<sub>3</sub> is observed, while strong and short Si-O bonds are formed in γ -Al<sub>2</sub>O<sub>3</sub>, consequently stabilizing this phase. On the other hand, Cr additions induce a smaller bond length increase in α-Al<sub>2</sub>O<sub>3</sub> than in γ -Al<sub>2</sub>O<sub>3</sub>, therefore stabilizing the α-phase. The bulk moduli of γ -Al<sub>2</sub>O<sub>3</sub> with these additives show no significant changes. The phase stability and elastic property data discussed here underline the application potential of Si alloyed γ -Al<sub>2</sub>O<sub>3</sub> for applications at elevated temperatures. Furthermore it is evident that the tetragonal hausmannite structure is a suitable description for γ -Al<sub>2</sub>O<sub>3</sub>.</p>