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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Fernandes, Jra
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Topics
Publications (12/12 displayed)
- 2017The role of PbTiO3 layers in piezoelectric multilayer composite films based on Pb(Mg1/3Nb2/3)O-3-PbTiO3citations
- 2017Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin filmscitations
- 2015Fracture behaviour of wood bonded joints under modes i and II by digital image correlation and fibre Bragg grating sensorscitations
- 2014Morphotropic Phase Boundary in Solution- Derived ( Bi0.5Na0.5) 1-xBaxTiO3 Thin Films: Part II Functional Properties and Phase Stabilitycitations
- 2013Room temperature structure and multiferroic properties in Bi0.7La0.3FeO3 ceramicscitations
- 2012Properties of multilayer composite thin films based on morphotropic phase boundary Pb(Mg1/3Nb2/3)O-3-PbTiO3citations
- 2006Optimization of the fabrication parameters of PZT 52/48 thin films by pulsed laser ablationcitations
- 2005Bottom electrode crystallization of Pb(Zr, Ti)O-3 thin films made by RF magnetron sputteringcitations
- 2003Barium metaplumbate thin film electrodes for ferroelectric devicescitations
- 2003Simple method for crystallizing ceramic thin films using platinum bottom electrodes as resistive heating elementscitations
- 2003Pulsed laser deposition of barium metaplumbate thin films for ferroelectric capacitorscitations
- 2002Interactions at zirconia-Au-Ti interfaces at high temperaturescitations
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article
Bottom electrode crystallization of Pb(Zr, Ti)O-3 thin films made by RF magnetron sputtering
Abstract
The bottom electrode crystallization method was used for the heat-treatment of amorphous Pb(Zr-0(52)., Ti-0.48)O-3 thin films deposited by radio-frequency magnetron sputtering on Pt/Ti/SiO2/Si substrates. Two different heating and cooling rates were applied and two different contact wires (W and Pt) were alternately used for the Joule heat generation in the Pt bottom electrode. The dielectric and ferroelectric properties of the films were compared with the properties of the films crystallized using halogen lamp annealing in the same conditions. All the PZT samples showed similar ferroelectric properties at room temperature, with high dielectric constant and remanent polarization values as well as good resistance to ferroelectric fatigue, the Al/PZT/Pt/Ti/SiO2/Si capacitors having low leakage currents. The experimental results obtained show that the bottom electrode crystallization method is a cheap and low power consumption method which can successfully replace the classical crystallization methods.