| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Furdyna, J. K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2012Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity bandcitations
- 2008Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductorscitations
- 2005Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors
- 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon couplingcitations
- 2004Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1-xMnxV heterostructurescitations
- 2004Determination of hole-induced ferromagnetic Mn-Mn exchange in p-type Zn1-xMnxTe by inelastic neutron scatteringcitations
- 2004Determination of hole-induced ferromagnetic exchange between nearest-neighbor Mn spins in p-type Zn1-xMnxTe
- 2004Electronic effects determining the formation of ferromagnetic III 1-xMnx V alloys during epitaxial growthcitations
- 2004Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAscitations
- 2003Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scatteringcitations
- 2003Curie temperature limit in ferromagnetic Ga1-xMnxAs
- 2003Ferromagnetic III-Mn-V semiconductors
- 2002Growth and optical properties of Mn-containing II-VI quantum dots
- 2002Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profilingcitations
Places of action
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article
Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1-xMnxV heterostructures
Abstract
The effect of increasing the Fermi level by modulation doping on the incorporation of Mn into the III-V host lattice - and hence on the ferromagnetic properties of III<sub>1-x</sub>Mn<sub>x</sub> V alloys - is investigated in Ga<sub>1-x</sub>Mn<sub>x</sub> As/Ga<sub>1-y</sub> Al <sub>y</sub>As heterojunctions and quantum wells. Introducing Be acceptors into the Ga<sub>1-y</sub>Al<sub>y</sub>As barriers leads to an increase of the Curie temperature T<sub>C</sub> of Ga<sub>1-x</sub>Mn<sub>x</sub>As, from 70 K in undoped structures to over 100 K in modulation-doped structures. This increase is qualitatively consistent with multi-band mean field theory simulation of carrier-mediated ferromagnetism. Here the crucial feature is that the increase of T<sub>C</sub> occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, and that T<sub>C</sub> actually drops when the Be-doped layer is grown first. Using ion channelling techniques we provide direct evidence that this latter reduction in T <sub>C</sub> is directly correlated with an increased formation of magnetically inactive Mn interstitials. This formation of interstitials is induced by the shift of the Fermi energy as the holes are transferred from the barrier to the quantum well during the growth.