| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Saint-Girons, Guillaume
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Integration of epitaxial LiNbO3 thin films with silicon technologycitations
- 2024Reversible Single‐Pulse Laser‐Induced Phase Change of Sb 2 S 3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrationscitations
- 2023Strain generated by the stacking faults in epitaxial SrO(SrTiO 3 ) N Ruddlesden–Popper structures
- 2021Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO 3 Transparent Thin Filmscitations
- 2021Spectroscopic ellipsometry: a sensitive tool to monitor domains formation during the bias enhanced nucleation of heteroepitaxial diamondcitations
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2019Perovskite-oxide based hyperbolic metamaterialscitations
- 2019Poisson ratio and bulk lattice constant of (Sr 0.25 La 0.75 )CrO 3 from strained epitaxial thin filmscitations
- 2019Enhanced ferroelectricity in epitaxial Hf 0.5 Zr 0.5 O 2 thin films integrated with Si(001) using SrTiO 3 templatescitations
- 2016Epitaxy of SrTiO3 on Silicon: The Knitting Machine Strategycitations
- 2016Development of Epitaxial Oxide Ceramics Nanomaterials Based on Chemical Strategies on Semiconductor Platforms
- 2015Capping and decapping GaAs nanowires with As for preventing oxidation and for epitaxial shell growth
- 2014Structural study and ferroelectricity of epitaxial BaTiO3 films on silicon grown by molecular beam epitaxycitations
- 2013LaAlO 3 /Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical propertiescitations
- 2010Oxides heterostructures for nanoelectronicscitations
- 2004Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networkscitations
Places of action
| Organizations | Location | People |
|---|
article
Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
Abstract
We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the stress field of a periodic dislocation network (DN) shallowly buried and parallel to the surface. This DN is a grain boundary (GB) that forms, between a thinGaAs layer (onwhich growthwas performed) and aGaAs substrate joined together by wafer bonding, in order to accommodate a tilt and a twist between these two crystals; both these misorientations are imposed in a controlled manner. This GB is composed of a one-dimensional network of mixed dislocations and of a one-dimensional network of screwdislocations. For both samples, the nanostructures observed by transmission electronmicroscopy (TEM) and atomic forcemicroscopy are ordered by the underlyingDNobserved byTEMsince they have same dimensions andorientations as the cells of the DN.