| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Ledenyov, Dimitri
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2004Complex permittivity measurements at variable temperatures of low loss dielectric substrates employing split post and single post dielectric resonatorscitations
- 2004Precise microwave characterization of MgO substrates for HTS circuits with superconducting post dielectric resonatorcitations
- 2003Microwave Properties of Yttrium Vanadate Crystals at Cryogenic Temperatures
- 2003Microwave characterisation of CaF2 at cryogenic temperatures using a dielectric resonator techniquecitations
Places of action
| Organizations | Location | People |
|---|
article
Precise microwave characterization of MgO substrates for HTS circuits with superconducting post dielectric resonator
Abstract
Accurate data of complex permittivity of dielectric substrates are needed for efficient design of HTS microwave planar circuits. We have tested MgO substrates from three different manufacturing batches using a dielectric resonator with superconducting parts recently developed for precise microwave characterization of laminar dielectrics at cryogenic temperatures. The measurement fixture has been fabricated using a SrLaAlO3 post dielectric resonator with DyBa2Cu3O7 end plates and silver-plated copper sidewalls to achieve the resolution of loss tangent measurements of 2 × 10−6. The tested MgO substrates exhibited the average relative permittivity of 9.63 and tanδ from 3.7 × 10−7 to 2 × 10−5 at frequency of 10.5 GHz in the temperature range from 14 to 80 K.