| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Perez De La Cruz, Jp
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2017Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin filmscitations
- 2014Structural, electrical and magnetic properties of magnetoelectric GdMnO3 thin films prepared by a sol-gel methodcitations
- 2013Room temperature structure and multiferroic properties in Bi0.7La0.3FeO3 ceramicscitations
- 2013Influence of Process Parameters on the RF Sputtered GaP Thin Filmscitations
- 2012Properties of multilayer composite thin films based on morphotropic phase boundary Pb(Mg1/3Nb2/3)O-3-PbTiO3citations
- 2012Structural and electrical properties of LuMnO3 thin film prepared by chemical solution methodcitations
- 2012Low-temperature dielectric response of NaTaO3 ceramics and filmscitations
- 2011The influence of argon pressure and RF power on the growth of InP thin filmscitations
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article
The influence of argon pressure and RF power on the growth of InP thin films
Abstract
Indium phosphide thin films were grown onto glass substrates by RF magnetron sputtering. In this paper, we present a study on the role of argon pressure and rf power on magnetron sputtered InP films. These sputtering parameters are shown to affect the deposition rate, structure, morphology, electrical and optical properties of InP films. Single-phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (1 1 1) were observed at an argon pressure of 0.4 Pa, by keeping the substrate temperature (448 K) and RF power (150 W) constant. Hall measurements indicated n-type conductivity in InP films. The optical absorption studies indicated a direct band gap of 1.35 eV.