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Smith, L. M.
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Topics
Publications (15/15 displayed)
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011Compound semiconductor nanowires for optoelectronic device applications
- 2011Growth and properties of III-V compound semiconductor heterostructure nanowirescitations
- 2009III-V compound semiconductor nanowires
- 2009III-V compound semiconductor nanowirescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2008Tuning spin properties of excitons in single CdTe quantum dots by annealingcitations
- 2005Sensitivity of exciton spin relaxation in quantum dots to confining potentialcitations
- 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon couplingcitations
- 2004Tuning the optical and magnetic properties of II-VI quantum dots by post-growth rapid thermal annealingcitations
- 2004Optical studies of zero-field magnetization of CdMnTe quantum dots: Influence of average size and composition of quantum dotscitations
- 2003Tuning the properties of magnetic CdMnTe quantum dotscitations
- 2003Optical properties of semimagnetic quantum dots
- 2003Optical properties of annealed CdTe self-assembled quantum dotscitations
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article
Growth and properties of III-V compound semiconductor heterostructure nanowires
Abstract
<p>We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.</p>