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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Phillips, M. R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2007A comparison of the mechanical properties and the impact of contact induced damage in a- and c- axis ZnO single crystals
- 2006Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixingcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
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article
Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing
Abstract
<p>Implantation with low-energy (80 keV) oxygen ions and subsequent rapid thermal annealing at 800 °C are used to induce intermixing in a stack of 19 ZnO/Zn<sub>0.7</sub>Mg<sub>0.3</sub>O multiple quantum wells grown on sapphire by molecular beam epitaxy. Large blue shifts of more than 300 meV have been observed for doses up to 1 × 10<sup>16</sup> cm<sup>-2</sup>, with no observation of saturation. This process is driven by the creation of defects by implantation which encourage the diffusion of Mg from the barrier layers into the ZnO quantum wells. Although defects are introduced during the implantation process, good recovery of the cathodoluminescence is seen following rapid thermal annealing. The Zn-Mg interdiffusion in this system has also been calculated for the corresponding ion doses, and the diffusion coefficient extracted. This study has significant implications for band gap engineering of ZnO/ZnMgO optoelectronic devices.</p>