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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ali, M. A. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Buda, M.
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Topics
Publications (9/9 displayed)
- 2017The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
- 2008Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide laserscitations
- 2007Modeling and characterization of InAsGaAs quantum dot lasers grown using metal organic chemical vapor depositioncitations
- 2006Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixingcitations
- 2006Effect of rapid thermal annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs quantum well laser structurescitations
- 2004Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot laserscitations
- 2003Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetectorcitations
- 2003Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure designcitations
- 2003Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridgecitations
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article
Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing
Abstract
<p>Implantation with low-energy (80 keV) oxygen ions and subsequent rapid thermal annealing at 800 °C are used to induce intermixing in a stack of 19 ZnO/Zn<sub>0.7</sub>Mg<sub>0.3</sub>O multiple quantum wells grown on sapphire by molecular beam epitaxy. Large blue shifts of more than 300 meV have been observed for doses up to 1 × 10<sup>16</sup> cm<sup>-2</sup>, with no observation of saturation. This process is driven by the creation of defects by implantation which encourage the diffusion of Mg from the barrier layers into the ZnO quantum wells. Although defects are introduced during the implantation process, good recovery of the cathodoluminescence is seen following rapid thermal annealing. The Zn-Mg interdiffusion in this system has also been calculated for the corresponding ion doses, and the diffusion coefficient extracted. This study has significant implications for band gap engineering of ZnO/ZnMgO optoelectronic devices.</p>