• Duggan, G.
• Bland, S. W.
• Griffin, I. J.
• Heffernan, J.
• Kean, A. H.
• Wolverson, Daniel
• Emam-Ismail, M.
• Davies, J. J.

Abstract

<p>The spin-flip Raman scattering by the epitaxial layers of quaternary aluminum gallium indium phosphide alloys lattice matched to gallium arsenide has been investigated in order to gain insight into the band structure parameters of this material system. Both electron and hole spin-flip Raman signals were observed and were identified by their behaviour on the application of a biaxial strain to the epilayer. The gyromagnetic ratios of the electron and hole were determined and it was found that a three-band κ·p model gives a good description of the experimental values of the conduction band gyromagnetic ratio as a function of composition; these data provide a new insight into the dependence of the spin-orbit splitting on composition.</p>

Topics

• aluminium
• semiconductor
• band structure
• Gallium
• Indium
• spectroscopy