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| Naji, M. |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Varpula, Aapo
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Topics
Publications (13/13 displayed)
- 2018Rapid Thermal Characterization of Materials with Ultra-High Resolution of Droplet Size Specimens using the Three-Omega Methodcitations
- 2018Silicon nano-thermoelectric detectors for for sensing and instrumentation applications
- 2018Microfabricated sensor platform with through-glass vias for bidirectional 3-omega thermal characterization of solid and liquid samplescitations
- 2018Thermal characterization of liquid and solid samples using a measurement platform for the bidirectional 3-omega method
- 2017Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranescitations
- 2015Nondestructive characterization of fusion and plasma activated wafer bonding using mesa and recess structurescitations
- 2011Electrical properties of granular semiconductors : modelling and experiments on metal-oxide gas sensorscitations
- 2011A compact quantum statistical model for the ballistic nanoscale MOSFETscitations
- 2010Magnetic polarons in ferromagnetic semiconductor single-electron transistorscitations
- 2010Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensorscitations
- 2010Modelling of dc characteristics for granular semiconductorscitations
- 2010Small-signal analysis of granular semiconductorscitations
- 2010Modeling of transient electrical characteristics for granular semiconductorscitations
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article
Modelling of dc characteristics for granular semiconductors
Abstract
The dc characteristics of granular n-type semiconductors are calculated analytically with the drift-diffusion theory. Electronic trapping at the grain boundaries (GBs) is taken into account. The use of quadratic and linear GB potential profiles in the calculation is compared. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is excellent in a large voltage range. The results show that electronic trapping at the GBs has a remarkable effect on the highly nonlinear I-V characteristics of the material.