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| Naji, M. |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Azevedo, Nuno Monteiro |
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Varpula, Aapo
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Topics
Publications (13/13 displayed)
- 2018Rapid Thermal Characterization of Materials with Ultra-High Resolution of Droplet Size Specimens using the Three-Omega Methodcitations
- 2018Silicon nano-thermoelectric detectors for for sensing and instrumentation applications
- 2018Microfabricated sensor platform with through-glass vias for bidirectional 3-omega thermal characterization of solid and liquid samplescitations
- 2018Thermal characterization of liquid and solid samples using a measurement platform for the bidirectional 3-omega method
- 2017Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranescitations
- 2015Nondestructive characterization of fusion and plasma activated wafer bonding using mesa and recess structurescitations
- 2011Electrical properties of granular semiconductors : modelling and experiments on metal-oxide gas sensorscitations
- 2011A compact quantum statistical model for the ballistic nanoscale MOSFETscitations
- 2010Magnetic polarons in ferromagnetic semiconductor single-electron transistorscitations
- 2010Atomic layer deposition of tin dioxide sensing film in microhotplate gas sensorscitations
- 2010Modelling of dc characteristics for granular semiconductorscitations
- 2010Small-signal analysis of granular semiconductorscitations
- 2010Modeling of transient electrical characteristics for granular semiconductorscitations
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article
Small-signal analysis of granular semiconductors
Abstract
The small-signal ac response of granular n-type semiconductors is calculated analytically using the drift-diffusion theory when electronic trapping at grain boundaries is present. An electrical equivalent circuit (EEC) model of a granular n-type semiconductor is presented. The analytical model is verified with numerical simulation performed by SILVACO ATLAS. The agreement between the analytical and numerical results is very good in a broad frequency range at low dc bias voltages.