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Gronberg, Leif
VTT Technical Research Centre of Finland
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article
Oxidation of aluminum in ozonated water
Abstract
The oxidation of silicon and copper alloyed aluminum thin films inozonated water was studied. Experiments were performed in a wet bench atdifferent temperatures. The oxidation was studied mainly by opticalmethods and sheet resistance measurements. The films oxidized onlyslightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. Thethickness of the oxide as well as the sheet resistance of metal filmsincreased in the course of time. Since ozonated water processing causeonly slight oxidation of aluminum thin films it is suggested that thisresist removal process can be utilized in integrated circuit processing.