| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lähnemann, Jonas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022Molecular beam epitaxy of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB> ) 2</SUB>O<SUB>3</SUB> films (x ≤0.18 ): Structural properties and consequences of compositional inhomogeneitycitations
- 2021Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)<SUB>2</SUB>O<SUB>3</SUB> alloy filmscitations
- 2020Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experimentscitations
- 2020Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)citations
- 2014Luminescence associated with stacking faults in GaNcitations
- 2014Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiencycitations
- 2013Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayerscitations
- 2012Optical switching and related structural properties of epitaxial Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> filmscitations
- 2012Direct experimental determination of the spontaneous polarization of GaNcitations
- 2011Self-assisted nucleation and vapor-solid growth of InAs nanowires on bare Si (111)citations
- 2010GaN and ZnO nanostructurescitations
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article
Luminescence associated with stacking faults in GaN
Abstract
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should also be transferable to other wurtzite semiconductors....