| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ohtomo, Akira
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2017Superconductivity in Ti<sub>4</sub>O<sub>7</sub> and γ-Ti<sub>3</sub>O<sub>5</sub> filmscitations
- 2017Epitaxial structure and electronic property of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films grown on MgO (100) substrates by pulsed-laser depositioncitations
- 2017Highly oriented epitaxial CaFe<sub>2</sub>O<sub>4</sub> thin films on TiO<sub>2</sub> substrates grown by pulsed-laser depositioncitations
- 2016Fabrication and Characterization of Semiconductor Photoelectrodes with Orientation-Controlled α-Fe<sub>2</sub>O<sub>3</sub> Thin Filmscitations
- 2016Strain-induced metal-insulator transition in <i>t</i><sub>2g</sub> electron system of perovskite titanate Sm<sub>0.5</sub>Ca<sub>0.5</sub>TiO<sub>3</sub> filmsscitations
- 2015Pulsed-laser deposition of superconducting LiTi<sub>2</sub>O<sub>4</sub> ultrathin films
- 2015Direct growth of metallic TiH<sub>2</sub> thin films by pulsed laser depositioncitations
- 2015Conducting Si-doped γ-Ga<sub>2</sub>O<sub>3</sub> epitaxial films grown by pulsed-laser depositioncitations
- 2014Graphoepitaxy of ZnO: novel selection rule of domain formation on nanopatterned glass surface
- 2013Surface and interface engineering of ZnO based heterostructures fabricated by pulsed-laser depositioncitations
- 2013Spontaneous atomic ordering and magnetism in epitaxially stabilized double perovskitescitations
- 2012Epitaxial structures of band-gap-engineered α-(Cr<sub>x</sub>Fe<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> (0 ≤x≤1) films grown on C-plane sapphirecitations
- 2012Spontaneous atomic ordering and magnetism in epitaxially stabilized double-perovskites
- 2011Ferrimagnetism and spontaneous ordering of transition metals in double perovskite La<sub>2</sub>CrFeO<sub>6</sub> filmscitations
- 2011Magnetic properties of Sr<sub>2</sub>FeTaO<sub>6</sub> double perovskite epitaxially grown by pulsed-laser depositioncitations
- 2010Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskitescitations
- 2010Optimization of the Growth Conditions for Molecular Beam Epitaxy of Mg<sub>x</sub>Zn<sub>1-x</sub>O (0≤x≤0.12) Films on Zn-Polar ZnO Substratescitations
- 2010Controlled B-site ordering in Sr<SUB>2</SUB>CrReO<SUB>6</SUB> double perovskite films by using pulsed laser interval depositioncitations
Places of action
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article
Surface and interface engineering of ZnO based heterostructures fabricated by pulsed-laser deposition
Abstract
ZnO and related alloys are an important class of materials to realize transparent electronics because of their characteristic wide band-gap and high mobility, and also because of their practical advantages, such as: vailable n-type materials and bulk single crystals, low-cost production, and absence of toxicity. Our studies have been conducted for more than a decade and they have enabled surface and interface engineering on an atomic scale, presenting a promising technology for developing electrical devices of various kinds. The quality of the epitaxial films was improved drastically when grown on high-temperature annealed buffer layersprepared on lattice-matched ScAlMgO<sub>4</sub> substrates using pulsed-laser deposition. We carefully investigated the growth temperature dependence of surface morphology and electrical properties. Electron mobility was recorded as 440 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> at room temperature and 5500 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> at 1 K, leading to observation of the integer quantum Hall-effect (QHE) in abrupt ZnO/Mg<sub>x</sub>Zn<sub>1−x</sub>O interfaces. Two-dimensional electron gas (2DEG) was formed spontaneously in the interface because of the polarization mismatch between the layers. The observation of QHE enables us to access the direct determination of the interfacial electronic structure. In addition, the field-effect control of 2DEG has been demonstrated using lattice-matched interfaces as high-mobility channels.