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| Azevedo, Nuno Monteiro |
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Carrada, Marzia
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Publications (7/7 displayed)
- 2022Nano-composite MOx materials for NVMscitations
- 2020The 3D Design of Multifunctional Silver Nanoparticle Assemblies Embedded in Dielectricscitations
- 2014Structural analysis of the interface of silicon nanocrystals embedded in a Si3N4 matrixcitations
- 2011Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films
- 2011Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2stack tunnel dielectrics for memory application
- 2005Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applicationscitations
- 2005Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applicationscitations
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article
Structural analysis of the interface of silicon nanocrystals embedded in a Si3N4 matrix
Abstract
cited By 3 ; International audience ; The structure and interface states of thin nanocomposite layers containing Si nanocrystals embedded in an amorphous nitride matrix have been analyzed by Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). The Si 2p core-level spectrum of the nanocomposite layer was deconvoluted by using five Gaussian-Lorentzian contributions corresponding to the different nitride states of Si. It was shown that the Si-ncs/Si3N4 interfaces formed during annealing are composed of a high density of Si2+ subnitrides. These subnitrides are more likely to be responsible for the shoulder at 494cm-1 on the Raman spectra. Considering the proportion of Si2+ subnitrides with respect to Si0 states, an abrupt transition from the crystalline to the amorphous phase due to Si 2=N-Si bridge bonds is suggested.