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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Carrington, Peter James
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2021ULTRARAM™: a low-energy, high-endurance, compound-semiconductor memory on silicon
- 2019Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Siliconcitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layercitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
- 2016Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxycitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
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article
Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stacks
Abstract
<p>The effects of rapid thermal annealing on the photoluminescence emission obtained from ten-layer stacks of GaSb/GaAs type-II single monolayer quantum dots and Stranski-Krastanow grown quantum rings have been studied and interpreted. Post-growth rapid thermal annealing was performed with proximity capping at temperatures from 550 degrees C to 800 degrees C, resulting in an increase in photoluminescence emission intensity and a blue shift in peak energy in both types of stacks, together with changes in the activation energy for thermal quenching. This behaviour originates from Sb-As intermixing and changes in morphology of the nanostructures formed using the two different growth mechanisms.</p>