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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bowman, Robert M.
Queen's University Belfast
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2022Searching for refractory plasmonic materials: the structural and optical properties of Au3Zr intermetallic thin filmscitations
- 2022Optical properties of Au-Hf thin filmscitations
- 2019The optical properties of AuZr intermetallic alloys
- 2018Design and fabrication of plasmonic cavities for magneto-optical sensingcitations
- 2018Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayerscitations
- 2016A review of high magnetic moment thin films for microscale and nanotechnology applicationscitations
- 2014Ferromagnetism in DyRh and DyRhX (X = Fe, Ni, Co, Gd) thin filmscitations
- 2013Improved magnetization in sputtered dysprosium thin filmscitations
- 2012Magnetisation of 2.6T in Gadolinium Thin Filmscitations
- 2008CH022
- 2007Toward Self-Assembled Ferroelectric Random Access Memories:Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densitiescitations
- 2007Toward Self-Assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densitiescitations
- 2007Nanoscale ferroelectrics machined from single crystalscitations
- 2006Investigating the effects of reduced size on the properties of ferroelectricscitations
- 2006Perovskite lead zirconium titanate nanorings: Towards nanoscale ferroelectriccitations
- 2006Scaling of domain periodicity with thickness measured in BaTiO3 single crystal lamellae and comparison with other ferroicscitations
- 2004Understanding thickness effects in thin film capacitorscitations
- 2004Thickness independence of true phase transition temperatures in barium strontium titanate filmscitations
- 2004Intrinsic dielectric response in ferroelectric nano-capacitorscitations
- 2004Thin film capacitor cut from single crystals using focused ion beam millingcitations
- 2004Characteristics of the interfacial capacitance in thin film Ba0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodescitations
- 2004Maximum of dielectric permittivity caused by structural transition in ferroelectric BaTiO3-SrTiO3 superlattices
- 2002Exploring grain size as a cause for dead-layer effects in thin film capacitorscitations
- 2002Thickness-induced stabilization of ferroelectricity in SrRuO3/Ba0.5Sr0.5TiO3/Au thin film capacitorscitations
- 2001Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitorscitations
- 2001Enhancement of dielectric constant and associated coupling of polarization behavior in thin film relaxor superlatticescitations
Places of action
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article
Improved magnetization in sputtered dysprosium thin films
Abstract
<p>50nm thick nanogranular polycrystalline dysprosium thin films have been prepared via ultra-high vacuum DC sputtering on SiO2 and Si wafers. The maximum in-plane spontaneous magnetization at T = 4K was found to be µ<sub>0</sub>M<sub>S,4K</sub><sup>(C)</sup> = (3.28±0.26)T for samples deposited on wafers heated to 350°C with a Neel point of T<sub>N</sub><sup>(C)</sup> = (173±2)K and a ferromagnetic transition at T<sub>C</sub><sup>(C)</sup> = (80±2)K, measured via zero-field-cooled – field-cooled magnetization measurements, close to single-crystal values. The slightly reduced magnetization is explained in the light of a metastable face-centered cubic crystal phase which occurred at the seed interface and granularity related effects, that are still noticeably influential despite an in-plane magnetic easy axis. As deposited samples showed reduced magnetization of µ<sub>0</sub>M<sub>S,4K</sub><sup>(A)</sup> = (2.26±0.18)T, however their ferromagnetic transition shifted to a much higher temperature of T<sub>C</sub><sup>(A)</sup> = (172±2)K and the antiferromagnetic phase was completely suppressed probably as a result of strain.</p>