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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ribierre, Jean Charles
University of St Andrews
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2023Artificial p–n‐like Junction Based on Pure 2D Organic–Inorganic Halide Perovskite Structure Having Naphthalene Diimide Acceptor Moietiescitations
- 2018Strong Nonlinear Optical Response in the Visible Spectral Range with Epsilon‐Near‐Zero Organic Thin Filmscitations
- 2012Nanosecond two-photon absorption and lasing in fluorene-based organic semiconductors
- 2011Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistorscitations
- 2006Influence of the average molecular weight and the concentration of plasticizer on the orientational dynamics of chromophores in guest-host polymerscitations
Places of action
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article
Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors
Abstract
<jats:p>Solution-processed ambipolar organic field-effect transistors based on dicyanomethylene-substituted quinoidal quaterthiophene derivative [QQT(CN)4] are fabricated using various gate dielectric materials including cross-linked polyimide and poly-4-vinylphenol. Devices with spin-coated polymeric gate dielectric layers show a reduced hysteresis in their transfer characteristics. Among the insulating polymers examined in this study, a new fluorinated polymer with a low dielectric constant of 2.8 significantly improves both hole and electron field-effect mobilities of QQT(CN)4 thin films to values as high as 0.04 and 0.002 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>. These values are close to the best mobilities obtained in QQT(CN)4 devices fabricated on SiO<jats:sub>2</jats:sub> treated with octadecyltrichlorosilane. The influence of the metal used for source/drain metal electrodes on the device performance is also investigated. Whereas best device performances are achieved with gold electrodes, more balanced electron and hole field-effect mobilities could be obtained using chromium.</jats:p>