• Cappello, A.
• Valerini, D.
• Tapfer, L.
• Rizzo, A.
• Capodieci, Laura
• Signore, M. A.

Abstract

International audience ; 8 Ion bombardment during thin film growth is known to cause structural and morphological changes 9 in the deposited films and thus affecting their physical properties. In this work zirconium nitride 10 films have been deposited by ion assisted magnetron sputtering technique. The ion energy is 11 controlled by varying the voltage applied to the substrate in the range 0 – 25 V. The deposited ZrN 12 films are characterized for their structure, surface roughness, oxygen contamination, optical 13 reflectance and electrical resistivity. With increasing substrate voltage films cristallinity is enhanced 14 with a preferential orientation of the ZrN grains having the (111) axis perpendicular to the substrate 15 surface. In the same time, a decreasing in the electrical resistivity and in the oxygen contamination 16 content is observed up to 20 V. A higher substrate voltage (25 V) causes an inversion in the 17 observed experimental trends. The role of oxygen contamination decrease and nitrogen vacancies 18 generation due to the ionic assistance has been considered as possible explanation of the 19 experimental results. 20 21

Topics

• impedance spectroscopy
• surface
• grain
• resistivity
• thin film
• Oxygen
• zirconium
• Nitrogen
• nitride
• crystallinity