Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (11/11 displayed)

  • 2013P-type and undoped InGaN across the entire alloy composition rangecitations
  • 2013P-type InGaN across the entire alloy composition range13citations
  • 2012Embedded binary eutectic alloy nanostructures4citations
  • 2009Properties of native point defects in In1-xAlxN alloys3citations
  • 2008Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications6citations
  • 2008Band gap bowing parameter of In1-x Alx N70citations
  • 2008High efficiency InAlN-based solar cells5citations
  • 2008Low-temperature grown compositionally graded InGaN films19citations
  • 2002Band anticrossing in highly mismatched group II-VI semiconductor alloyscitations
  • 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloys12citations
  • 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation2citations

Places of action

Chart of shared publication
Alarcon-Llado, E.
2 / 4 shared
Mayer, M. A.
2 / 5 shared
Walukiewicz, W.
10 / 87 shared
Wang, Ke
1 / 18 shared
Nanishi, Y.
2 / 9 shared
Araki, T.
2 / 8 shared
Katsuki, T.
2 / 3 shared
Wang, K.
1 / 27 shared
Stone, P. R.
1 / 9 shared
Boswell-Koller, C. N.
1 / 2 shared
Chrzan, D. C.
1 / 6 shared
Sherburne, M. P.
1 / 2 shared
Dubon, O. D.
1 / 40 shared
Liao, C. Y.
1 / 6 shared
Haller, E. E.
8 / 30 shared
Minor, A. M.
1 / 10 shared
Watanabe, M.
1 / 5 shared
Guzman, J.
1 / 2 shared
Lieten, R. R.
1 / 1 shared
Yuan, C. W.
1 / 2 shared
Conry, T.
1 / 2 shared
Beeman, J. W.
3 / 21 shared
Bustillo, K. C.
1 / 3 shared
Shin, S. J.
1 / 2 shared
Sawyer, C. A.
1 / 3 shared
Lu, H.
1 / 15 shared
Jones, R. E.
4 / 8 shared
Li, S. X.
1 / 5 shared
Schaff, W. J.
4 / 10 shared
Matthews, K. D.
1 / 1 shared
Chen, X.
3 / 33 shared
Eastman, L. F.
1 / 1 shared
Hao, D.
1 / 1 shared
Broesler, R.
2 / 8 shared
Williamson, T. L.
1 / 1 shared
Hoffbauer, M. A.
1 / 1 shared
Liliental-Weber, Z.
1 / 25 shared
Miller, N.
1 / 3 shared
Wu, J.
3 / 56 shared
Ramdas, A.
1 / 1 shared
Miotkowski, I.
2 / 2 shared
Shan, W.
2 / 16 shared
Ramdas, A. K.
1 / 1 shared
Miotkowska, S.
1 / 1 shared
Ridgway, M. C.
1 / 38 shared
Chart of publication period
2013
2012
2009
2008
2002
2000

Co-Authors (by relevance)

  • Alarcon-Llado, E.
  • Mayer, M. A.
  • Walukiewicz, W.
  • Wang, Ke
  • Nanishi, Y.
  • Araki, T.
  • Katsuki, T.
  • Wang, K.
  • Stone, P. R.
  • Boswell-Koller, C. N.
  • Chrzan, D. C.
  • Sherburne, M. P.
  • Dubon, O. D.
  • Liao, C. Y.
  • Haller, E. E.
  • Minor, A. M.
  • Watanabe, M.
  • Guzman, J.
  • Lieten, R. R.
  • Yuan, C. W.
  • Conry, T.
  • Beeman, J. W.
  • Bustillo, K. C.
  • Shin, S. J.
  • Sawyer, C. A.
  • Lu, H.
  • Jones, R. E.
  • Li, S. X.
  • Schaff, W. J.
  • Matthews, K. D.
  • Chen, X.
  • Eastman, L. F.
  • Hao, D.
  • Broesler, R.
  • Williamson, T. L.
  • Hoffbauer, M. A.
  • Liliental-Weber, Z.
  • Miller, N.
  • Wu, J.
  • Ramdas, A.
  • Miotkowski, I.
  • Shan, W.
  • Ramdas, A. K.
  • Miotkowska, S.
  • Ridgway, M. C.
OrganizationsLocationPeople

article

Properties of native point defects in In1-xAlxN alloys

  • Lu, H.
  • Walukiewicz, W.
  • Jones, R. E.
  • Li, S. X.
  • Haller, E. E.
  • Schaff, W. J.
  • Ager, J. W.
Abstract

The electrical and optical properties of the In-rich InAlN alloys are strongly influenced by native point defects. Here the effects of the defects are studied using 2 MeV He<sup>+</sup> irradiation to vary the defect concentration. Localized native defects in In<sub>1-x</sub>Al<sub>x</sub>N(x &lt;0.45) are predominantly donors, with energy levels located above the conduction band edge. Accordingly, the electron concentration increases and the optical absorption edge blue shifts with increasing irradiation fluence before saturating at high fluences. Saturation occurs when the Fermi level reaches the Fermi level stabilization energy, which is the average energy of localized native defects in semiconductors, at 4.9 eV below the vacuum level. The energy position of the native defects also explains the initial increase followed by the quenching of the photoluminescence (PL) intensity, as well as the blue shift in the PL peak, with increasing irradiation fluence. © 2009 IOP Publishing Ltd.

Topics
  • impedance spectroscopy
  • photoluminescence
  • semiconductor
  • quenching
  • point defect