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Denlinger, J. D.
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2013Highly mismatched N-rich GaN1-xSbx films grown by low temperature molecular beam epitaxycitations
- 2010Non-equilibrium GaNAs alloys with band gap ranging from 0.8-3.4 eVcitations
- 2010Full multiple scattering analysis of XANES at the Cd L3 and OK edges in CdO films combined with a soft-x-ray emission investigationcitations
- 2009Highly mismatched crystalline and amorphous GaN1-x As x alloys in the whole composition rangecitations
- 2006Structure and electronic properties of InN and In-rich group III-nitride alloyscitations
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document
Structure and electronic properties of InN and In-rich group III-nitride alloys
Abstract
The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 × 10<sup>18</sup> cm<sup>-3</sup> and mobilities exceeding 2000 cm<sup>2</sup> (Vs)<sup>-1</sup>. Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein-Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated. © 2006 IOP Publishing Ltd.