People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Vopson, Melvin Marian
University of Portsmouth
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Diamagnetic coupling for magnetic tuning in nano-thin filmscitations
- 2019Sub-lattice polarization states in anti-ferroelectrics and their relaxation processcitations
- 2019Evidence of substrate roughness surface induced magnetic anisotropy in Ni80Fe20 flexible thin filmscitations
- 20171D core-shell magnetoelectric nanocomposites by template-assisted liquid phase depositioncitations
- 2012Probing the local strain-mediated magnetoelectric coupling in multiferroic nanocomposites by magnetic field-assisted piezoresponse force microscopycitations
- 2012Nanostructured p-n junctions for kinetic-to-electrical energy conversioncitations
- 2005Preparation of high moment CoFe films with controlled grain size and coercivitycitations
- 2005Deposition of polycrystalline thin films with controlled grain sizecitations
- 2005Grain size effects in metallic thin films prepared using a new sputtering technology
- 2004Novel sputtering technology for grain-size controlcitations
Places of action
Organizations | Location | People |
---|
article
Deposition of polycrystalline thin films with controlled grain size
Abstract
Difficulties in controlling the grain size and size distribution in polycrystalline thin films are a major obstacle in achieving efficient performance of thin film devices. In this paper we describe a sputtering technology that allows the control of the grain size and size distribution in sputtered films without the use of seed layers, substrate heating or additives. This is demonstrated for three different materials (Cr, NiFe and FeMn) via transmission electron microscopy imaging and grain size analysis performed using the cumulative percentage method. The mean grain size was controlled only via the sputtering rate. We show that higher sputtering rates promote the growth of larger grains. Similar trends were obtained in the standard deviation, which showed a clear reduction with the sputtering rate.