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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Rzepiński, Patryk
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article
Aluminum, gallium and indium thiobenzoates: synthesis, characterization and crystal structures
Abstract
Compounds R2M[S(O)CPh] [where R = tBu, M = Al (1); R = tBu, M = Ga (2); R = Me, M = Ga (3)] have been synthesized in reactions of R3M with thiobenzoic acid in a 1:1 molar ratio of reagents. The reaction of Me3Ga with three equivalents of thiobenzoic acid yielded the compound Ga[S(O)CPh]3 (4), in which thiobenzoate moieties act as bidentate SO ligands. In the presence of Et3N, InCl3 reacted with thiobenzoic acid with formation of an ionic compound {In[S(O)CPh]4}−(HNEt3)+ (5). The thiobenzoate ligands are bonded with the metallic center via the sulfur atoms only. The compounds 4 and 5 have been structurally and thermally studied. The thermal decomposition pathways of compounds 4 and 5 are proposed.