| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reynolds, Steve
University of Dundee
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2019A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors
- 2017Photoconductivity in Materials Researchcitations
- 2014Electronic properties of undoped microcrystalline silicon oxide filmscitations
- 2012Properties of thin-film silicon solar cells at very high irradiancecitations
- 2012Stress characterization of thin microcrystalline silicon films
- 2010Excimer laser wet oxidation of hydrogenated amorphous siliconcitations
- 2010Measurement and modelling of transport in amorphous semiconductorscitations
- 2009Carrier mobility and density of states in microcrystalline silicon film compositions, probed using time-of-flight photocurrent spectroscopy
- 2005Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors
- 2004Decay from steady-state photocurrent in amorphous semiconductorscitations
- 2003Analysis and modelling of generation-recombination noise in amorphous semiconductorscitations
- 2002Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopycitations
- 2002Transient decay from the steady-state in microcrystalline silicon
- 2001Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filamentscitations
- 2001Generation-recombination noise in amorphous semiconductorscitations
- 2000Improved high resolution post-transit spectroscopy for determining the density of states in amorphous semiconductors
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article
A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors
Abstract
A new method for measuring the free carriers lifetime (Tr) and the density of localised states (DOS) in amorphous semiconductors is described. The method is based on the analysis of transient photoconductivity (TPC) data using Laplace transform technique. This technique involves Laplace transform of TPC data, it is a simple analysis of the solution of the basic linearised multiple trapping equations for free and trapped electrons. It is demonstrated by application to simulated and experimental TPC data measured on a typical disordered semiconductor, the hydrogenated amorphous silicon (a-Si:H). An introduced Tr in the computing of the TPC using an arbitrarily proposed DOS model is recovered with high accuracy. For the experimental case, the determination of the exact DOS and the estimated Tr from the experimental TPC data allow to reconstruct accurately this last. The performance and limitations of the technique are studied by means of computer simulations. Limitations are essentially the low temperatures of measurement of TPC when the recombination phenomenon is not observed at short times.