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| Naji, M. |
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Allsopp, Duncan W. E.
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Topics
Publications (7/7 displayed)
- 2019SUBSTRATES FOR SEMICONDUCTOR DEVICES
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxycitations
- 2013Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal–organic vapour phase epitaxycitations
- 2012Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPEcitations
- 2011Advances in nano-enabled GaN photonic devices
- 2009Enhanced light extraction by photonic quasi-crystals in GaN blue LEDscitations
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article
Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal–organic vapour phase epitaxy
Abstract
The planar defect structure of coalesced GaN layers fabricated on ordered arrays of nanorods and grown by metal-organic vapour phase epitaxy has been studied using conventional and high-resolution transmission electron microscopy. During the process of coalescence, a boundary was created between two pyramids, where I1-type basal plane stacking faults propagating through the overgrown layers are terminated by Frank-Shockley partial dislocations. According to multislice HRTEM simulations of experimental observed images in the [ ] zone axis, the step-and hairpin-shaped basal prismatic stacking faults with inclinedplane are consistent with Drums structural model, which has a lower formation energy compared with the model proposed by Amelinckx. Based on the observation that there are no stacking faults in the overgrown layers prior to the nanopyramid merging, the mechanism of coalescence induced stacking faults is proposed. This research contributes to the understanding of planar defect formation in III-nitride semiconductor grown by a coalescence process.