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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Hursthouse, Andrew
University of the West of Scotland
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Development of functional materials for the removal of heavy metals from industrial waste waters
- 2021Sustainable strategies for improved regulatory compliance within the food-processing sectorcitations
- 2019The potential of remedial techniques for hazard reduction of steel process by productscitations
- 2018Assessing PCB pollution in the Baltic Sea - An equilibrium partitioning based studycitations
- 2017Synthesis, characterization, and adsorptive properties of Fe3O4/GO nano-composites for antimony removalcitations
- 2016Study of spatial distribution of heavy metals in agricultural soils of El Tarf area (Northeast Algerian)
- 2016Alkyl Polyglycosides for Efficient Heat Transfer in Water Heating Systems
- 2015Equilibrium passive sampling as a tool to study polycyclic aromatic hydrocarbons in Baltic Sea sediment pore-water systemscitations
- 2010Measurement of arsenic and gallium content of gallium arsenide semiconductor waste streams by ICP-MScitations
- 2008Cobalt and secondary poisoning in the terrestrial food chaincitations
Places of action
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article
Measurement of arsenic and gallium content of gallium arsenide semiconductor waste streams by ICP-MS
Abstract
The chemistry of semiconductor wafer processing liquid waste, contaminated by heavy metals, was investigated to determine arsenic content. Arsenic and gallium concentrations were determined for waste slurries collected from gallium arsenide ( GaAs) wafer processing at three industrial sources and compared to slurries prepared under laboratory conditions. The arsenic and gallium content of waste slurries was analyzed using inductively coupled plasma mass-spectrometry (ICP-MS) and it is reported that the arsenic content of the waste streams was related to the wafer thinning process, with slurries from wafer polishing having the highest dissolved arsenic content at over 1,900 mg L-1. Lapping slurries had much lower dissolved arsenic (<90 mg L-1) content, but higher particulate contents. It is demonstrated that significant percentage of GaAs becomes soluble during wafer lapping. Grinding slurries had the lowest dissolved arsenic content at 15 mg L-1. All three waste streams are classified as hazardous waste, based on their solids content and dissolved arsenic levels and treatment is required before discharge or disposal. It is calculated that as much as 93% of material is discarded through the entire GaAs device manufacturing process, with limited recycling. Although gallium can be economically recovered from waste slurries, there is little incentive to recover arsenic, which is mostly landfilled. Options for treating GaAs processing waste streams are reviewed and some recommendations made for handling the waste. Therefore, although the quantities of hazardous waste generated are miniscule in comparison to other industries, sustainable manufacturing practices are needed to minimize the environmental impact of GaAs semiconductor device fabrication.