| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bowman, Robert M.
Queen's University Belfast
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2022Searching for refractory plasmonic materials: the structural and optical properties of Au3Zr intermetallic thin filmscitations
- 2022Optical properties of Au-Hf thin filmscitations
- 2019The optical properties of AuZr intermetallic alloys
- 2018Design and fabrication of plasmonic cavities for magneto-optical sensingcitations
- 2018Mechanism of Gold-Assisted Exfoliation of Centimeter-Sized Transition-Metal Dichalcogenide Monolayerscitations
- 2016A review of high magnetic moment thin films for microscale and nanotechnology applicationscitations
- 2014Ferromagnetism in DyRh and DyRhX (X = Fe, Ni, Co, Gd) thin filmscitations
- 2013Improved magnetization in sputtered dysprosium thin filmscitations
- 2012Magnetisation of 2.6T in Gadolinium Thin Filmscitations
- 2008CH022
- 2007Toward Self-Assembled Ferroelectric Random Access Memories:Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densitiescitations
- 2007Toward Self-Assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densitiescitations
- 2007Nanoscale ferroelectrics machined from single crystalscitations
- 2006Investigating the effects of reduced size on the properties of ferroelectricscitations
- 2006Perovskite lead zirconium titanate nanorings: Towards nanoscale ferroelectriccitations
- 2006Scaling of domain periodicity with thickness measured in BaTiO3 single crystal lamellae and comparison with other ferroicscitations
- 2004Understanding thickness effects in thin film capacitorscitations
- 2004Thickness independence of true phase transition temperatures in barium strontium titanate filmscitations
- 2004Intrinsic dielectric response in ferroelectric nano-capacitorscitations
- 2004Thin film capacitor cut from single crystals using focused ion beam millingcitations
- 2004Characteristics of the interfacial capacitance in thin film Ba0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodescitations
- 2004Maximum of dielectric permittivity caused by structural transition in ferroelectric BaTiO3-SrTiO3 superlattices
- 2002Exploring grain size as a cause for dead-layer effects in thin film capacitorscitations
- 2002Thickness-induced stabilization of ferroelectricity in SrRuO3/Ba0.5Sr0.5TiO3/Au thin film capacitorscitations
- 2001Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitorscitations
- 2001Enhancement of dielectric constant and associated coupling of polarization behavior in thin film relaxor superlatticescitations
Places of action
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article
Thin film capacitor cut from single crystals using focused ion beam milling
Abstract
The focused ion beam microscope (FIB) has been used to fabricate thin parallel-sided ferroelectric capacitors from single crystals of BaTiO3 and SrTiO3. A series of nano-sized capacitors ranging in thickness from similar to660 nm to similar to300 nm were made. Cross-sectional high resolution transmission electron microscopy (HRTEM) revealed that during capacitor fabrication, the FIB rendered around 20 nm of dielectric at the electrode-dielectric interface amorphous, associated with local gallium impregnation. Such a region would act electrically in series with the single crystal and would presumably have a considerable negative influence on the dielectric properties. However, thermal annealing prior to gold electrodes deposition was found to fully recover the single crystal capacitors and homogenise the gallium profile. The dielectric testing of the STO ultra-thin single crystal capacitors was performed yielding a room temperature dielectric constant of similar to300, as is the case in bulk. Therefore, there was no evidence of a collapse in dielectric constant associated with thin film dimensions.