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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Gregg, Marty
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (43/43 displayed)
- 2024Observation of antiferroelectric domain walls in a uniaxial hyperferroelectriccitations
- 2023Ferroelectric domain wall p-n junctionscitations
- 2022Conducting ferroelectric domain walls emulating aspects of neurological behaviorcitations
- 2021Influence of charged walls and defects on DC resistivity and dielectric relaxations in Cu-Cl boracite
- 2021An empirical approach to measuring interface energies in mixed-phase bismuth ferritecitations
- 2020Lead palladium zirconate titanate: A room temperature nanoscale multiferroic thin filmcitations
- 2020Nanodomain Patterns in Ultra-Tetragonal Lead Titanate (PbTiO3)citations
- 2019Studies of Multiferroic Palladium Perovskitescitations
- 2017Non-equilibrium ferroelectric-ferroelastic 10nm nanodomains: wrinkles, period-doubling and power-law relaxationcitations
- 2017Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramiccitations
- 2017Superdomain dynamics in ferroelectric-ferroelastic films: Switching, jamming and relaxationcitations
- 2014Studies of the Room-Temperature Multiferroic Pb(Fe0.5Ta0.5)0.4(Zr0.53Ti0.47)0.6O3: Resonant Ultrasound Spectroscopy, Dielectric, and Magnetic Phenomenacitations
- 2013A Lead-Free and High-Energy Density Ceramic for Energy Storage Applicationscitations
- 2012Increasing recoverable energy storage in electroceramic capacitors using "dead-layer" engineeringcitations
- 2010Synthesis of epitaxial metal oxide nanocrystals via a phase separation approachcitations
- 2009Settling the ‘‘Dead Layer’’ Debate in Nanoscale Capacitorscitations
- 2009Effect of wall thickness on the ferroelastic domain size of BaTiO3citations
- 2009The Influence of Point Defects and Inhomogeneous Strain on the Functional Behaviour of Thin film Ferroelectricscitations
- 2009Origin of Ferroelastic domains in Free-Standing Single Crystal Ferroelectric Filmscitations
- 2008CH022
- 2007Toward Self-Assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densitiescitations
- 2007Nanoscale ferroelectrics machined from single crystalscitations
- 2006Perovskite lead zirconium titanate nanorings: Towards nanoscale ferroelectriccitations
- 2006Scaling of domain periodicity with thickness measured in BaTiO3 single crystal lamellae and comparison with other ferroicscitations
- 2004Understanding thickness effects in thin film capacitorscitations
- 2004The effect of flexoelectricity on the dielectric properties of inhomogeneously strained ferroelectric thin filmscitations
- 2004Thickness independence of true phase transition temperatures in barium strontium titanate filmscitations
- 2004Intrinsic dielectric response in ferroelectric nano-capacitorscitations
- 2004Progressive loss of ferroelectricity under bipolar pulsed fields and experimental determination of non-switchable polarization in Au/Ba0.5Sr0.5TiO3/SrRuO3 thin-film capacitors
- 2004Thin film capacitor cut from single crystals using focused ion beam millingcitations
- 2004Effects of poling, and implications for metastable phase behavior in barium strontium titanate thin film capacitorscitations
- 2004Characteristics of the interfacial capacitance in thin film Ba0.5Sr0.5TiO3 capacitors with SrRuO3 and (La, Sr)CoO3 bottom electrodescitations
- 2004Maximum of dielectric permittivity caused by structural transition in ferroelectric BaTiO3-SrTiO3 superlattices
- 2003Evidence for two-phase regions in BST thin films from capacitance-voltage datacitations
- 2003Studies of switching kinetics in ferroelectric thin filmscitations
- 2003Dielectric and electromechanical properties of Pb(Mg-1/3,Nb- 2/3)O-3-PbTiO3 thin films grown by pulsed laser depositioncitations
- 2002Electrode field penetration: A new interpretation of tunneling currents in barium strontium titanate (BST) thin films
- 2002Exploring grain size as a cause for dead-layer effects in thin film capacitorscitations
- 2002Thickness-induced stabilization of ferroelectricity in SrRuO3/Ba0.5Sr0.5TiO3/Au thin film capacitorscitations
- 2002Switching dynamics in ferroelectric thin films: An experimental survey
- 2002Electromechanical properties of Pb(Mg1/3Nb2/3)O-3-7%PbTiO3 thin films made by pulsed laser depositioncitations
- 2001Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitorscitations
- 2001Enhancement of dielectric constant and associated coupling of polarization behavior in thin film relaxor superlatticescitations
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article
Switching dynamics in ferroelectric thin films: An experimental survey
Abstract
We have conducted a broad survey of switching behavior in thin films of a range of ferroelectric materials, including some materials that are not typically considered for FeRAM applications, and are hence less studied. The materials studied include: strontium bismuth tantalate (SBT), barium strontium titanate (BST), lead zicronate titanate (PZT), and potassium nitrate (KNO3). Switching in ferroelectric thin films is typically considered to occur by domain nucleation and growth. We discuss two models of frequency dependence of coercive field, the Ishisbashi-Orihara theory where the limiting step is domain growth and the model of Du and Chen where the limiting step is nucleation. While both models fit the data fairly well the temperature dependence of our results on PZT and BST suggest that the nucleation model of Du and Chen is more appropriate for the experimental results that we have obtained.