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Publications (7/7 displayed)
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15Ncitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>Ncitations
- 2023Neuromorphic Circuits with Redox-Based Memristive Devices
- 2022Microstructure effects on the phase transition behavior of a prototypical quantum materialcitations
- 2022Ultrathin Al1−xScxN for Low‐Voltage‐Driven Ferroelectric‐Based Devicescitations
- 2010Evidence for triplet superconductivity in Josephson junctions with barriers of the ferromagnetic Heusler alloy Cu2MnAl
- 2001Thickness dependent morphology and electrical characteristics of SrBi 2Ta2O9 deposited by metal organic decompositioncitations
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article
Thickness dependent morphology and electrical characteristics of SrBi 2Ta2O9 deposited by metal organic decomposition
Abstract
<p>The dependence of morphology of SrBi2Ta2O9 (SBT) deposited by Metal Organic Decomposition (MOD) on film thickness and annealing temperature during the crystallization anneal was investigated. From Atomic Force Microscope (AFM) images of these films it can be seen that nucleation and grain growth strongly depends on SBT thickness which also affects the electrical characteristics of the correspondent Pt/SBT/Pt-capacitors. In this work results of a morphological study of SBT films with thicknesses between 40 and 110nm and annealing temperatures between 650C and 725C will be presented.</p>