| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Felser, Claudia
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2024Enhancement of the anomalous Hall effect by distorting the Kagome lattice in an antiferromagnetic materialcitations
- 20242024 roadmap on 2D topological insulatorscitations
- 2023Large anomalous Hall, Nernst effect and topological phases in the 3d-4d/5d-based oxide double perovskitescitations
- 2023Ultrafast helicity-dependent photocurrents in Weyl Magnet Mn3Sncitations
- 2023Materials Informatics for the Development and Discovery of Future Magnetic Materialscitations
- 2022Spin-voltage-driven efficient terahertz spin currents from the magnetic Weyl semimetals Co2MnGa and Co2MnAl
- 2022Spiral magnetism, spin flop, and pressure-induced ferromagnetism in the negative charge-transfer-gap insulator Sr$_2$FeO$_4$citations
- 2022Electronic structure and low-temperature thermoelectric transport of TiCoSb single crystalscitations
- 2022Spiral magnetism, spin flop, and pressure-induced ferromagnetism in the negative charge-transfer-gap insulator Sr2FeO4citations
- 2021Magnetic and Electronic Properties of Weyl Semimetal Co2MnGa Thin Filmscitations
- 2021Magnetic and Electronic Properties of Weyl Semimetal Co$_{2}$MnGa Thin Filmscitations
- 2019Large resistivity reduction in mixed-valent CsAuBr3 under pressurecitations
- 2017Magnetic antiskyrmions above room temperature in tetragonal Heusler materialscitations
- 2016Superconductivity in Weyl semimetal candidate MoTe2citations
- 2016Transparent conducting oxide induced by liquid electrolyte gatingcitations
- 2015Topological states on the gold surfacecitations
- 2014Investigation of the Mn3 Ga/MgO interface for magnetic tunneling junctionscitations
- 2014Heusler nanoparticles for spintronics and ferromagnetic shape memory alloyscitations
- 2011Thermoelectric properties of spark plasma sintered composites based on TiNiSn half-Heusler alloyscitations
- 2010Investigation of the Thermoelectric Properties of LiAlSi and LiAlGecitations
- 2010Investigation of the thermoelectric properties of the series TiCo 1-x Ni x Sn x Sb 1-xcitations
- 2010Electronic structure of fully epitaxial Co2TiSn thin films
- 2010Investigation of the thermoelectric properties of LiAlSi and LiAlGecitations
- 2010Seebeck coefficients of half-metallic ferromagnetscitations
- 2008Doped semiconductors as half-metallic materials: experiments and first-principles calculations of CoTi 1- x M x Sb ( M =Sc, V, Cr, Mn, Fe)citations
Places of action
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article
Transparent conducting oxide induced by liquid electrolyte gating
Abstract
Optically transparent conducting materials are essential in modern technology. These materials are used as electrodes in displays, photovoltaic cells, and touchscreens; they are also used in energy conserving windows to reflect the infrared spectrum. The most ubiquitous transparent conducting material is tin-doped indium oxide (ITO), a wide-gap oxide whose conductivity is ascribed to n-type chemical doping. Recently, it has been shown that ionic liquid gating can induce a reversible, nonvolatile metallic phase in initially insulating films of WO<sub>3</sub>. Here, we use hard X-ray photoelectron spectroscopy and spectroscopic ellipsometry to show that the metallic phase produced by the electrolyte gating does not result from a significant change in the bandgap but rather originates from new in-gap states. These states produce strong absorption below ∼1 eV, outside the visible spectrum, consistent with the formation of a narrow electronic conduction band. Thus WO3 is metallic but remains colorless, unlike other methods to realize tunable electrical conductivity in this material. Core-level photoemission spectra show that the gating reversibly modifies the atomic coordination of Wand O atoms without a substantial change of the stoichiometry; we propose a simple model relating these structural changes to the modifications in the electronic structure. Thus we show that ionic liquid gating can tune the conductivity over orders of magnitude while maintaining transparency in the visible range, suggesting the use of ionic liquid gating for many applications.