| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bao, Zhenan
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Visualization of the distribution of covalently cross-linked hydrogels in CLARITY brain-polymer hybrids for different monomer concentrations.citations
- 2021Conducting Polymer‐Based Granular Hydrogels for Injectable 3D Cell Scaffolds
- 2020Understanding the Origin of Highly Selective CO2 Electroreduction to CO on Ni, N-doped Carbon Catalysts.citations
- 2020Air-Stability and Carrier Type in Conductive M3(Hexaaminobenzene)2, (M = Co, Ni, Cu).citations
- 2019Fine-Tuning Semiconducting Polymer Self-Aggregation and Crystallinity Enables Optimal Morphology and High-Performance Printed All-Polymer Solar Cells.citations
- 2018Effect of Nonconjugated Spacers on Mechanical Properties of Semiconducting Polymers for Stretchable Transistorscitations
- 2016Direct Uniaxial Alignment of a Donor-Acceptor Semiconducting Polymer Using Single-Step Solution Shearing.citations
- 2015Structural and Electrical Investigation of C 60 –Graphene Vertical Heterostructurescitations
- 2015Ultrahigh electrical conductivity in solution-sheared polymeric transparent films.citations
- 2015Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECTcitations
- 2015Impact of the Crystallite Orientation Distribution on Exciton Transport in Donor-Acceptor Conjugated Polymerscitations
- 2014One-dimensional self-confinement promotes polymorph selection in large-area organic semiconductor thin filmscitations
- 2014Ultrafast energy transfer from rigid, branched side-chains into a conjugated, alternating copolymercitations
- 2012Controlled Conjugated Backbone Twisting for an Increased Open-Circuit Voltage while Having a High Short-Circuit Current in Poly(hexylthiophene) Derivativescitations
- 2012Chemical and Engineering Approaches To Enable Organic Field-Effect Transistors for Electronic Skin Applicationscitations
- 2011Tuning charge transport in solution-sheared organic semiconductors using lattice straincitations
- 2010Highly sensitive flexible pressure sensors with microstructured rubber dielectric layerscitations
- 2009Self-Sorted Nanotube Networks on Polymer Dielectrics for Low-Voltage Thin-Film Transistorscitations
- 2009High-Performance Air-Stable n-Channel Organic Thin Film Transistors Based on Halogenated Perylene Bisimide Semiconductorscitations
- 2009Crystalline Ultrasmooth Self-Assembled Monolayers of Alkylsilanes for Organic Field-Effect Transistorscitations
Places of action
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article
Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT
Abstract
The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost large-area electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed "controlled OSC nucleation and extension for circuits" (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit half-adder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication.