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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Gopman, Daniel B.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2024Reduction-Induced Magnetic Behavior in LaFeO3−δ Thin Films
- 2024L10 FePd-based perpendicular magnetic tunnel junctions with 65% tunnel magnetoresistance and ultralow switching current densitycitations
- 2023Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layerscitations
- 2023Sputtered L10-FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronicscitations
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article
L10 FePd-based perpendicular magnetic tunnel junctions with 65% tunnel magnetoresistance and ultralow switching current density
Abstract
<p>L1<sub>0</sub> FePd is increasingly recognized as a potential candidate for magnetic tunnel junctions (MTJs), yet there remains room for enhancing device performance. In this work, we fabricated fully-integrated L1<sub>0</sub> FePd-based perpendicular MTJ devices and achieved a significant increase in tunnel magnetoresistance, reaching ∼65%, compared to the previous record of 25%. Notably, we observed bi-directional switching with a low switching current density of about 1.4 × 10<sup>5</sup> A/cm<sup>2</sup>, which outperforms the typical spin-transfer torque (STT) MTJ by about one order of magnitude. We propose two possible mechanisms to elucidate the switching process and associated device performance: (1) The voltage-controlled exchange coupling-driven switching of the bottom CoFeB layer; (2) The STT-driven switching of the exchange-coupled L1<sub>0</sub> FePd-CoFeB composite. While additional research is necessary, these findings may further advance the integration of L1<sub>0</sub> FePd into spintronic devices, potentially enabling low-energy memory and logic technologies.</p>