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Kentsch, Ulrich
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Topics
Publications (7/7 displayed)
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024The Influence of Crystal Orientation and Thermal State of a Pure Cu on the Formation of Helium Blisters
- 2023Enhanced Luminescence of Yb3+ Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditionscitations
- 2022Combined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysis ; ENEngelskEnglishCombined Au/Ag nanoparticle creation in ZnO nanopillars by ion implantation for optical response modulation and photocatalysiscitations
- 2022Direct visualization of highly resistive areas in GaN by means of low-voltage scanning electron microscopycitations
- 2021Impact of low energy ion beams on the properties of rr-P3HT films
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article
Impact of post-ion implantation annealing on Se-hyperdoped Ge
Abstract
Hyperdoped germanium (Ge) has demonstrated increased sub-bandgap absorption, offering potential applications in the short-wavelength-infrared spectrum (1.0-3.0 μm). This study employs ion implantation to introduce a high concentration of selenium (Se) into Ge and investigates the effects of post-implantation annealing techniques on the recovery of implantation damage and alterations in optical properties. We identify optimal conditions for two distinct annealing techniques: rapid thermal annealing (RTA) at a temperature of 650 °C and ultrafast laser heating (ULH) at a fluence of 6 mJ/cm2. The optimized ULH process outperforms the RTA method in preserving high doping profiles and achieving a fourfold increase in sub-bandgap absorption. However, RTA leads to regrowth of single crystalline Ge, while ULH most likely leads to polycrystalline Ge. The study offers valuable insights into the hyperdoping processes in Ge for the development of advanced optoelectronic devices. © 2024 Author(s).