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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Oliver, Rachel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Improved Sequentially Processed Cu(In,Ga)(S,Se)<sub>2</sub> by Ag Alloying
- 2024Room temperature quantum emitters in aluminum nitride epilayers on silicon
- 2023Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopycitations
- 2021Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
- 2021Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance.
- 2019Thick adherent diamond films on AlN with low thermal barrier resistancecitations
- 2019Thick, adherent diamond films on AlN with low thermal barrier resistancecitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2017Stable Speckle Patterns for Nano-scale Strain Mapping up to 700 °C
- 2017Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
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article
Room temperature quantum emitters in aluminum nitride epilayers on silicon
Abstract
Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy contains point-like emitters in the red to near-infrared part of the spectrum. We study the photon statistics and polarization of emission at a wavelength of 700–750 nm, showing signatures of quantized electronic states under pulsed and CW optical excitation. The discovery of quantum emitters in a material deposited directly on silicon can drive integration using industry standard 300 mm wafers, established complementary metal-oxide-semiconductor control electronics, and low marginal-cost mass-manufacturing.