| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Clark, R. N.
University of Bristol
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Room temperature quantum emitters in aluminum nitride epilayers on silicon
- 2019Cassini-VIMS observations of Saturn's main rings: II. A spectrophotometric study by means of Monte Carlo ray-tracing and Hapke's theorycitations
- 2018Development of an adapted electrochemical noise technique for in-situ corrosion monitoring of spent nuclear fuel aqueous storage environments
- 2017From the Icy Satellites to Small Moons and Rings: Spectral Indicators by Cassini-VIMS Unveil Compositional Trends in the Saturnian System
- 2013Surface Composition of the Non-Ice Component on Icy Satellites and Ring Particles in the Saturn System
- 2012Multi-wavelength studies of Saturn's rings to constrain ring particle properties and ring structure: the VIMS perspective
- 2011Composition and Grain Sizes of Dark Material in Saturn's Icy Satellites and Rings
- 2011The Composition of Saturn's Rings and Satellites from Cassini VIMS and UVIS
- 2010Spectrophotometric Modeling of Enceladus Surface Properties and Composition from Vims Data
- 2008The Composition of Saturn's Rings
- 2007Saturn's Rings Observed with Cassini-VIMS
Places of action
| Organizations | Location | People |
|---|
article
Room temperature quantum emitters in aluminum nitride epilayers on silicon
Abstract
Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy contains point-like emitters in the red to near-infrared part of the spectrum. We study the photon statistics and polarization of emission at a wavelength of 700–750 nm, showing signatures of quantized electronic states under pulsed and CW optical excitation. The discovery of quantum emitters in a material deposited directly on silicon can drive integration using industry standard 300 mm wafers, established complementary metal-oxide-semiconductor control electronics, and low marginal-cost mass-manufacturing.