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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Murapaka, Chandrasekhar
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Publications (3/3 displayed)
- 2024Deposition pressure-controlled phase tailoring and stability of <i>β</i>-W for spintronic applicationscitations
- 2024Deposition Pressure Dependence on Spin Hall Angle of W Thin Films Grown on NiFecitations
- 2023Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient conditioncitations
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article
Deposition pressure-controlled phase tailoring and stability of <i>β</i>-W for spintronic applications
Abstract
<jats:p>Understanding the nucleation and growth of tungsten (W) is technologically important in spin-to-charge interconversion for realizing energy-efficient spintronic devices. Here, we have systematically investigated the effect of Ar deposition pressure (PAr) on the nucleation and growth of W. The observed surface topography as a function of PAr reveals a microstructural transition from zone T to zone 1 in the structure zone model. The physical origin for the increasing roughness as a function of PAr correlates with the surface diffusion of adatoms and growth kinetics in the Volmer–Weber growth mechanism. Grazing incidence x-ray diffraction (GIXRD) results show that W exhibits a structural phase transition from a mixed phase of (α+β)-W to a single phase of β-W as a function of PAr. The analysis of the electron diffraction patterns obtained from the films grown on amorphous-SiNx windows also supports these observations. The observed transition is fundamentally correlated with the growth kinetics in zone T and zone I. Thickness-dependent GIXRD results qualitatively prove that the film grown in zone T exhibits compressive strain, whereas that grown in zone I exhibits only tensile strain. The critical thickness for the phase transition is strongly attributed to the strain during nucleation and growth. The increasing resistivity as a function of PAr corroborates the change in structural phases. Thickness-dependent resistivity measurements correlate with the degree of crystallinity via relative intensity observed from the GIXRD results. Our results strongly suggest that W structural phases can be deterministically controlled via PAr for developing low-power spintronic devices.</jats:p>