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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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King, P. D. C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Surface reconstructions and electronic structure of metallic delafossite thin filmscitations
- 2024Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy
- 2023Spin-orbit coupled spin-polarised hole gas at the CrSe2-terminated surface of AgCrSe2citations
- 2023Flat band separation and robust spin Berry curvature in bilayer kagome metalscitations
- 2023Flat band separation and robust spin Berry curvature in bilayer kagome metalscitations
- 2017Narrow-band anisotropic electronic structure of ReS 2citations
- 2017Quasi two-dimensional Fermi surface topography of the delafossite PdRhO2citations
- 2017Quasi two-dimensional Fermi surface topography of the delafossite PdRhO 2citations
- 2014Electron mobility in CdO filmscitations
- 2011Electron mobility in CdO filmscitations
- 2009Surface electronic properties of Mg-doped InAlN alloyscitations
- 2009Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3citations
- 2009Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3 ; Bandabstand, elektronische Struktur und Elektronenakkumulation an der Oberfläche von kubischem und rhomoedrischem In2O3citations
- 2009Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculationscitations
- 2008Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopycitations
- 2008Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopycitations
- 2008Bandgap and effective mass of epitaxial cadmium oxidecitations
- 2008Surface electronic properties of clean and S-terminated InSb(001) and (111)Bcitations
- 2008Surface electronic properties of undoped InAlN alloyscitations
- 2008Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculationscitations
- 2008InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurementscitations
- 2007In adlayers on c-plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopycitations
- 2007X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offsetcitations
Places of action
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article
Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy
Abstract
AgCrSe<sub>2</sub> exhibits remarkably high ionic conduction, an inversion symmetry-breaking structural transition, and is host to complex non-colinear magnetic orders. Despite its attractive physical and chemical properties, and its potential for technological applications, studies of this compound to date are focused almost exclusively on bulk samples. Here, we report the growth of AgCrSe<sub>2</sub> thin films via molecular beam epitaxy. Single-orientated epitaxial growth was confirmed by X-ray diffraction, while resonant photoemission spectroscopy measurements indicate a consistent electronic structure as compared to bulk single crystals. We further demonstrate significant flexibility of the grain morphology and cation stoichiometry of this compound via control of the growth parameters, paving the way for the targeted engineering of the electronic and chemical properties of AgCrSe<sub>2</sub> in thin-film form.