| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Silva, José Pedro Basto
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Bi2ZnTiO6 thin films for next-generation photovoltaics: study of material properties characterization and deposition conditions optimization
- 2024Recent development of lead-free relaxor ferroelectric and antiferroelectric thin films as energy storage dielectric capacitorscitations
- 2023Are lead-free relaxor ferroelectric materials the most promising candidates for energy storage capacitors?citations
- 2023Thickness-dependent microstructure, resistive switching, ferroelectric, and energy storage properties of pulsed laser deposited 0.85[0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3]-0.15SrTiO3 thin filmscitations
- 2023Disentangling stress and strain effects in ferroelectric HfO2citations
- 2023Resistive switching behavior in ZnO:Ca thin films deposited by a pulsed laser deposition techniquecitations
- 2023The ferro-pyro-phototronic effect for high-performance self-powered photodetectorscitations
- 2023Effect of MgO doping on energy storage and electrocaloric properties of ferroelectric 0.6Ba(Zr0.2Ti0.8)O3–0.4(Ba0.7Ca0.3)TiO3 ceramicscitations
- 2022Synthesis and characterization of microporous carbon matrix enriched by MnO2 nanoparticlescitations
- 2022Ferroelectric properties of ZrO2 films deposited on ITO-coated glasscitations
- 2022Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin filmscitations
- 2021All-oxide p−n junction thermoelectric generator based on SnOx and ZnO thin filmscitations
- 2021Touch sensor and photovoltaic characteristics of CuSbS2 thin filmscitations
- 2021High-performance self-powered photodetectors achieved through the pyro-phototronic effect in Si/SnOx/ZnO heterojunctionscitations
- 2021Semiconductor/relaxor 0–3 type composites: a novel strategy for energy storage capacitorscitations
- 2020Barium‐doped zinc oxide thin films as highly efficient and reusable photocatalystscitations
- 2020Lead-based and lead-free ferroelectric ceramic capacitors for electrical energy storagecitations
- 2020Microstructure tailoring for enhancing the energy storage performance of 0.98[0.6Ba(Zr0.2Ti0.8)O3-0.4(Ba0.7Ca0.3)TiO3]-0.02BiZn1/2Ti1/2O3 ceramic capacitorscitations
- 2019Highly sensitive thermoelectric touch sensor based on p-type SnO x thin filmcitations
- 2019High-performance μ-thermoelectric device based on Bi2Te3/Sb2Te3 p-n junctionscitations
- 2019Substrate temperature induced effect on microstructure, optical and photocatalytic activity of ultrasonic spray pyrolysis deposited MoO3 thin filmscitations
- 2012Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin filmscitations
- 2012Structural and Electrical Properties of Nanostructured Ba 0.8 Sr 0.2 TiO 3 Films Deposited by Pulsed Laser Deposition
Places of action
| Organizations | Location | People |
|---|
article
Disentangling stress and strain effects in ferroelectric HfO2
Abstract
Ferroelectric HfO2 films are usually polycrystalline and contain a mixture of polar and nonpolar phases. This challenges the understanding and control of polar phase stabilization and ferroelectric properties. Several factors, such as dopants, oxygen vacancies, or stress, among others, have been investigated and shown to have a crucial role on optimizing the ferroelectric response. Stress generated during deposition or annealing of thin films is a main factor determining the formed crystal phases and influences the lattice strain of the polar orthorhombic phase. It is difficult to discriminate between stress and strain effects on polycrystalline ferroelectric HfO2 films, and the direct impact of orthorhombic lattice strain on ferroelectric polarization has yet to be determined experimentally. Here, we analyze the crystalline phases and lattice strain of several series of doped HfO2 epitaxial films. We conclude that stress has a critical influence on metastable orthorhombic phase stabilization and ferroelectric polarization. On the contrary, the lattice deformation effects are much smaller than those caused by variations in the orthorhombic phase content. The experimental results are confirmed by density functional theory calculations on HfO2 and Hf0.5Zr0.5O2 ferroelectric phases. ; Financial support from the Spanish Ministry of Science and Innovation (No.MCIN/AEI/10.13039/501100011033), through the Severo Ochoa FUNFUTURE (No. CEX2019-000917-S), project Nos. PID2020-112548RB-I00 and PID2019-107727RB-I00, from Generalitat de Catalunya (No. 2021 SGR 00804), and from CSIC through the i-LINK (No. LINKA20338) program is acknowledged. We also acknowledge Project No. TED2021-130453B-C21, funded by No. MCIN/AEI/10.13039/501100011033 and the European Union Next Generation EU/PRTR. T.S. is financially supported by China Scholarship Council (CSC) under Grant No. 201807000104. This work was also supported by (i) the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contract No. ...