Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2023Grain size in low loss superconducting Ta thin films on c axis sapphire6citations

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Chart of shared publication
Isakov, Brian
1 / 1 shared
Zheng, Jiangchang
1 / 1 shared
Chen, Xi
1 / 20 shared
Gyenis, Andras
1 / 1 shared
Jaeck, Berthold
1 / 1 shared
Weber, Joel
1 / 1 shared
Chart of publication period
2023

Co-Authors (by relevance)

  • Isakov, Brian
  • Zheng, Jiangchang
  • Chen, Xi
  • Gyenis, Andras
  • Jaeck, Berthold
  • Weber, Joel
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article

Grain size in low loss superconducting Ta thin films on c axis sapphire

  • Isakov, Brian
  • Zheng, Jiangchang
  • Casey, Leung Ka Wun
  • Chen, Xi
  • Gyenis, Andras
  • Jaeck, Berthold
  • Weber, Joel
Abstract

<jats:p>In recent years, the implementation of thin-film Ta has led to improved coherence times in superconducting circuits. Efforts to further optimize this materials set have become a focus of the subfield of materials for superconducting quantum computing. It has been previously hypothesized that grain size could be correlated with device performance. In this work, we perform a comparative grain size experiment with α-Ta on c axis sapphire. Our evaluation methods include both room-temperature chemical and structural characterization and cryogenic microwave measurements, and we report no statistical difference in device performance between smaller- and larger-grain-size devices with grain sizes of 924 and 1700 nm2, respectively. These findings suggest that grain size is not correlated with loss in the parameter regime of interest for Ta grown on c axis sapphire, narrowing the parameter space for optimization of this materials set.</jats:p>

Topics
  • impedance spectroscopy
  • grain
  • grain size
  • experiment
  • thin film