Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (2/2 displayed)

  • 2023Decoupling the roles of defects/impurities and wrinkles in thermal conductivity of wafer-scale hBN films1citations
  • 2021Role of defects and grain boundaries in the thermal response of wafer-scale hBN films7citations

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Chart of shared publication
Chugh, Dipankar
1 / 4 shared
Bandopadhyay, Aditya
1 / 3 shared
Bera, Kousik
1 / 1 shared
Chugh, D.
1 / 2 shared
Bera, K.
1 / 2 shared
Chart of publication period
2023
2021

Co-Authors (by relevance)

  • Chugh, Dipankar
  • Bandopadhyay, Aditya
  • Bera, Kousik
  • Chugh, D.
  • Bera, K.
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article

Decoupling the roles of defects/impurities and wrinkles in thermal conductivity of wafer-scale hBN films

  • Chugh, Dipankar
  • Bandopadhyay, Aditya
  • Bera, Kousik
  • Roy, Anushree
Abstract

<p>We demonstrate a non-monotonic evolution of in-plane thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E<sub>2g</sub><sup>high</sup> phonon mode, which, in turn, is used to estimate the rise in the temperature of the films under different laser powers. As the conventional Fourier law of heat diffusion cannot be directly employed analytically to evaluate the thermal conductivity of these films with defects and wrinkles, finite-element modeling is used instead. In the model, average heat resistance is used to incorporate an overall near-surface defect structure, and Voronoi cells with contact resistance at the cell boundaries are constructed to mimic the wrinkled domains. The effective in-plane thermal conductivity is estimated to be 87, 55, and 117 W/m K for the 2, 10, and 30 nm-thick films, respectively. We also present a quantitative estimation of the thermal resistance by defects and wrinkles individually to the heat flow. Our study reveals that the defects/impurities render a much higher resistance to heat transfer in the films than wrinkles.</p>

Topics
  • impedance spectroscopy
  • surface
  • nitride
  • defect
  • Boron
  • Raman spectroscopy
  • thermal conductivity
  • defect structure
  • heat resistance