| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vurpillot, François
University of Rouen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024On the iron content of Mn-Ni-Si-rich clusters that form in reactor pressure vessel steels during exposure to neutron irradiationcitations
- 2023A Quantitative Investigation of Functionalized Glazing Stacks by Atom Probe Tomographycitations
- 2023Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomographycitations
- 2023Improving Spatial and Elemental Associations in Analytical Field Ion Microscopycitations
- 2021Analytical Three-Dimensional Field Ion Microscopy of an Amorphous Glass FeBSicitations
- 2021Development of Wide Field of View Three-Dimensional Field Ion Microscopy and High-Fidelity Reconstruction Algorithms to the Study of Defects in Nuclear Materialscitations
- 2021Development of Wide Field of View Three-Dimensional Field Ion Microscopy and High-Fidelity Reconstruction Algorithms to the Study of Defects in Nuclear Materialscitations
- 2019Imaging individual solute atoms at crystalline imperfections in metalscitations
- 2017Reconstructing APT Datasets: Challenging the Limits of the Possible
- 2016Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75Ncitations
Places of action
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article
Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography
Abstract
The properties of ScAlN layers grown by molecular beam epitaxy have been carefully studied using atom probe tomography (APT) and complementary techniques. The measured III-site fraction within the ScxAl1−xN layer is x = 0.16 ± 0.02, in good agreement with the values determined by x-ray photoelectron spectroscopy (XPS, x = 0.14) and secondary ion mass spectrometry (SIMS, x = 0.14). The frequency distribution analysis indicates that the compound behaves as a random alloy. A significant amount of oxygen, around 0.2% in site fraction, is found within the ScAlN layer as a randomly distributed impurity. The alloy composition measurement in terms of Sc fraction is rather independent of the surface electric field, which excludes compositional inaccuracies for the experimental parameters used in the APT analysis.</jats:p>