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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rigutti, Lorenzo
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Topics
Publications (10/10 displayed)
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2023Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser meltingcitations
- 2023Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomographycitations
- 2023Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser meltingcitations
- 2019Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodescitations
- 2018Atom probe tomography of nitride semiconductorscitations
- 2016Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75Ncitations
- 2015Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameterscitations
- 2012Carrier localization in InN/InGaN multiple-quantum wells with high In-contentcitations
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article
Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography
Abstract
The properties of ScAlN layers grown by molecular beam epitaxy have been carefully studied using atom probe tomography (APT) and complementary techniques. The measured III-site fraction within the ScxAl1−xN layer is x = 0.16 ± 0.02, in good agreement with the values determined by x-ray photoelectron spectroscopy (XPS, x = 0.14) and secondary ion mass spectrometry (SIMS, x = 0.14). The frequency distribution analysis indicates that the compound behaves as a random alloy. A significant amount of oxygen, around 0.2% in site fraction, is found within the ScAlN layer as a randomly distributed impurity. The alloy composition measurement in terms of Sc fraction is rather independent of the surface electric field, which excludes compositional inaccuracies for the experimental parameters used in the APT analysis.</jats:p>