• Georgiev, Yordan M.
• Grenzer, Jörg
• Wen, Shuyu
• Pyszniak, Krzysztof
• Turek, Marcin
• Steuer, Oliver
• Berencén, Yonder
• Shaikh, Mohd Saif
• Wu, Shaoteng
• Prucnal, Slawomir
• Zhou, Shengqiang
• Helm, Manfred
• Fischer, Inga Anita
• Reiter, Sebastian
• Hübner, René

Abstract

<jats:p>GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.</jats:p>

Topics

• density
• semiconductor
• annealing
• current density