| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hübner, René
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2023Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniquescitations
- 2023Structural investigations of Au–Ni aerogels: morphology and element distributioncitations
- 2023Bottom-up fabrication of FeSb2 nanowires on crystalline GaAs substrates with ion-induced pre-patterning
- 2022Defect Nanostructure and its Impact on Magnetism of α-Cr2O3 thin filmscitations
- 2022Flexomagnetism and vertically graded Néel temperature of antiferromagnetic Cr2O3 thin films
- 2022Homogenization and short-range chemical ordering of Co–Pt alloys driven by the grain boundary migration mechanismcitations
- 2022Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
- 2022Self-Supported Three-Dimensional Quantum Dot Aerogels as a Promising Photocatalyst for CO2 Reduction
- 2021Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealingcitations
- 2020Increasing the Diversity and Understanding of Semiconductor Nanoplatelets by Colloidal Atomic Layer Deposition
- 2020Formation of Thin NiGe Films by Magnetron Sputtering and Flash Lamp Annealingcitations
- 2020Directionality of metal-induced crystallization and layer exchange in amorphous carbon/nickel thin film stackscitations
- 2020Tunable magnetic vortex dynamics in ion-implanted permalloy diskscitations
- 2019Specific ion effects directed noble metal aerogels: Versatile manipulation for electrocatalysis and beyondcitations
- 2019Structure-property relationship of Co 2 MnSi thin films in response to He + -irradiation
- 2018Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Filmscitations
- 2018Nematicity of correlated systems driven by anisotropic chemical phase separationcitations
- 2018Core–Shell Structuring of Pure Metallic Aerogels towards Highly Efficient Platinum Utilization for the Oxygen Reduction Reactioncitations
- 2017Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
- 2017Purely antiferromagnetic magnetoelectric random access memory
- 2016Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter depositioncitations
- 2016Carbon : nickel nanocomposite templates - predefined stable catalysts for diameter-controlled growth of single-walled carbon nanotubescitations
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
- 2005Focussing and defocussing effects at radio frequency glow discharge optical emission spectroscopy analyses of thin films with partly nonconductive componentscitations
- 2002Crystallisation of caesium borosilicate glasses with approximate boroleucite compositioncitations
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article
Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
Abstract
<jats:p>GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.</jats:p>