| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zhou, Shengqiang
Helmholtz-Zentrum Dresden-Rossendorf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopycitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2023Aluminium substituted yttrium iron garnet thin films with reduced Curie temperaturecitations
- 2023Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniquescitations
- 2023Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser meltingcitations
- 2022Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
- 2020Magneto-structural correlations in a systematically disordered B2 latticecitations
- 2019Nanoscale n(++)-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopycitations
- 2018Nematicity of correlated systems driven by anisotropic chemical phase separationcitations
- 2017Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
- 2016Ultra-doped n-type germanium thin films for sensing in the mid-infraredcitations
- 2013Forming-free resistive switching in multiferroic BiFeO3 thin films with enhanced nanoscale shuntscitations
- 2011Control of rectifying and resistive switching behavior in BiFeO3 thin filmscitations
- 2011Reduced leakage current in BiFeO3 thin films with rectifying contactscitations
Places of action
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article
Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
Abstract
<jats:p>GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.</jats:p>