• Pandey, Indra Raj
• Liu, Zhifu
• Hansson, Conny
• Peters, John
• Pan, Lei
• Wessels, Bruce

Abstract

<jats:p>High-flux capable semiconductor x-ray detectors are essential in various applications, but the detrimental effects of detector polarization limit their use in many cases. Here, we studied the polarization of perovskite CsPbBr3 semiconductor detectors using ultrahigh flux synchrotron x rays (106–1012 photons s−1 mm−2 at 58.61 keV). The CsPbBr3 detectors did not show immediate polarization prominently until a flux higher than 1010 photons s−1 mm−2. Using the pump-and-probe technique, we visualized the spatial and temporal effects of polarization. The polarized region, represented by reduced photocurrent, extended beyond the area under direct irradiation, and the reduced photocurrent persisted after potential de-polarization treatments. We found that stronger applied electric fields and fewer carrier traps can mitigate polarization, represented by less photocurrent deficit. By examining the detectors’ current response under controlled ambient light, low, and high-flux x rays, we studied the trap filling and release behavior of CsPbBr3. We discovered that the polarization is caused by partial detector damage due to deep defects generated by ultrahigh flux x-ray irradiation. Our work provides insight into CsPbBr3 polarization under extremely intense x-ray radiation and shows that reducing crystal defects and increasing detector bias voltage are effective solutions.</jats:p>

Topics

• perovskite
• impedance spectroscopy
• semiconductor
• laser emission spectroscopy
• defect