| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Hagendorf, Christian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Interface Engineering in All-Oxide Photovoltaic Devices Based on Photoferroelectric BiFe0.9Co0.1O3 Thin Films
- 2023Minimizing electro-optical losses of ITO layers for monolithic perovskite silicon tandem solar cellscitations
- 2023Microscopic Origins of Contact Deterioration During Annealing of Silicon Heterojunction Solar Cell Contactscitations
- 2023Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin filmscitations
- 2023Design and application of a linear acceleration test setup for defect diagnostics in high-throughput transportation systems
- 2023Enhancement of NiOx/Poly-Si Contact Performance by Insertion of an Ultrathin Metallic Ni Interlayercitations
- 2022Abrasion testing of anti-reflective coatings under various conditionscitations
- 2022Interfacial Oxides at Metal/TCO Junctions and Ultra-Low Contact Resistivity Determination by Micro Transfer Length Measurements Based on Selective Laser Ablationcitations
- 2020Impact of Samarium on the growth of epitaxial Bismuth ferrite thin films
- 2020Impact of Samarium on the Growth of Epitaxial Bismuth Ferrite Thin Filmscitations
- 2018High-performance p-type multicrystalline silicon (mc-Si)citations
Places of action
| Organizations | Location | People |
|---|
article
Ultrawide bandgap willemite-type Zn<sub>2</sub>GeO<sub>4</sub> epitaxial thin films
Abstract
<jats:p> Willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> is a promising ultrawide bandgap semiconductor material. To date, experimental results on growth and physical properties of epitaxial thin films of willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> are not available. Here, we report the heteroepitaxial growth of (00.1)-oriented Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> thin films on c-plane sapphire substrates using pulsed laser deposition. The in-plane orientation relationships are [11.0] Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>//[11.0] Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and [[Formula: see text]] Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>//[[Formula: see text]] Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. A 450 nm thick epitaxial film with a surface roughness of 2.5 nm deposited under 0.1 mbar oxygen partial pressure exhibits a full width at half maximum (FWHM) of rocking curve of (00.6) reflex of 0.35°. The direct bandgap is evaluated to be 4.9 ± 0.1 eV. The valence band maximum is determined to be 3.7 ± 0.1 eV below the Fermi level. Together with the density-functional theory band structure calculation, it is suggested that the O 2p orbital and Zn 3d orbital dominantly contribute to the valence band of Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub>. The steady-state photoluminescence (PL) spectra of the films under 266 nm excitation at room temperature exhibit a broad defect-related emission band centered at 2.62 eV with a FWHM of 0.55 eV. The origin of this native defect-related PL is suggested to correlate with Zn interstitials. This work advances the fundamental study on willemite-type Zn<jats:sub>2</jats:sub>GeO<jats:sub>4</jats:sub> epitaxial thin films for potential device application. </jats:p>